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| to-92 plastic-encapsulate transistors 2SD1468 transistor (npn) features z low saturation voltage z ideal for low voltage, high current dribes z high dc current gain and high current maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 15 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.5 a dc current gain h fe v ce =3v, i c =100ma 120 560 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma 0.4 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 50 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe rank q r s range 120-270 180-390 270-560 to-92 1. emitter 2.collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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